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1.5V Drive Pch MOSFET
RZF030P01
Structure
Silicon P-channel
Dimensions (Unit : mm)
TUMT3
MOSFET
Features
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
(1) Gate
Applications
Switching
(2) Source
(3) Drain
Abbreviated symbol : YD
Packaging specifications
Equivalent circuit
Package
Taping
(3)
Type
RZF030P01
Code
Basic ordering unit (pieces)
TL
3000
(1)
? 1
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
? 2
(1) Gate
(2) Source
(3) Drain
Absolute maximum ratings (Ta=25 ° C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 12
± 10
Unit
V
V
? 1
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP
± 3
± 12
? 0.65
? 12
A
A
A
A
Total power dissipation
Channel temperature
Range of Storage temperature
P D ? 2
Tch
Tstg
0.8
150
? 55 to + 150
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
156
Unit
° C / W
? Mounted on a ceramic board.
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1/5
2009.01 - Rev.A
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